Industry trends

In 2022, the global semiconductor industry will end its continuous high growth and enter an adjustment cycle. In contrast, driven by demand for new energy vehicles, photovoltaics, and energy storage, the third-generation semiconductor industry has maintained rapid development, a global supply chain system is taking shape, a competitive landscape is gradually being established, and the industry is entering a period of rapid growth. However, the domestic third-generation semiconductor industry has undergone early production capacity deployment and production line construction. Domestic third-generation semiconductor products have been successfully developed and passed verification. ", the ecological system is gradually improving, the independent and controllable ability is continuously enhanced, and the overall competitive strength is increasing day by day.

1. With the release of production capacity, the third-generation semiconductor industry is about to enter the "Warring States Era"

        The "2022 White Paper on the Development of the Third-Generation Semiconductor Industry" shows that in 2022, my country's third-generation semiconductor power electronics and microwave radio frequency fields will achieve a total output value of 14.17 billion yuan, an increase of 11.7% over 2021, and the production capacity will continue to be released. Among them, SiC production capacity has doubled, GaN production capacity has increased by more than 30%, and new investment expansion plans have increased by 36.7% compared with 2021. At the same time, with the rapid growth of the electric vehicle market and the demand for photovoltaics and energy storage, the total size of my country's third-generation semiconductor power electronics and microwave radio frequency markets will reach 19.42 billion yuan in 2022, an increase of 34.5% over 2021. Among them, the power semiconductor market exceeds 10.55 billion yuan, and the microwave radio frequency market is about 8.86 billion yuan.

         It is expected that 2023 will be the year when the third-generation semiconductors will shine, and the market will witness a "Warring States Era" with "rapid technological progress, rapid industrial growth, and a major reshuffle".

2. SiC and GaN power devices have become a new force supporting the development of electronic information technology

         As a new generation of semiconductor materials, silicon carbide (SiC) and gallium nitride (GaN) have unparalleled advantages over traditional Si materials. Their bandgap width is about 3 times that of Si, and the breakdown field strength is about 10 times that of Si. High power, high carrier mobility, fast saturated electron velocity, high temperature and high pressure resistance, high energy efficiency, low loss and other excellent characteristics meet high voltage and high frequency scenarios.

From new energy vehicles to photovoltaic energy storage, from rail transit to mobile power supplies, from data centers to communication base stations, power devices based on third-generation wide-bandgap semiconductor materials play a key role. Power semiconductor devices are an important part of the development of power electronics technology. They are the core devices for power electronic devices to realize power conversion and power management. Especially in the current environment of technological competition and energy conservation and environmental protection, the third-generation semiconductor has become the focus of the game between global powers.

         In addition, the research on the third-generation wide-bandgap semiconductor materials is also promoting the continuous development of the LED lighting industry. From Mini-LED to Micro-LED, it continues to affect the semiconductor lighting industry, and plays an important role in the fields of high-power lasers and ultraviolet sterilization/detection. important role.

3. SiC and GaN layout speed up, how to break the static parameter test of power devices?

         At present, the power semiconductor device market presents development trends and directions such as integration and modularization, high performance and high reliability, multi-level technology, new device structures and processes, intelligence and reconfigurability. As a high power density device used in harsh environments, power semiconductor devices have the highest requirements for device reliability among all semiconductor devices. Therefore, precise performance test requirements for devices, reliability test conditions that meet usage scenarios, and accurate failure analysis methods will effectively improve the performance and reliability of power semiconductor device products.

         The performance of power devices of different materials and technologies varies greatly. Traditional measurement techniques or instruments on the market can generally cover the testing requirements of device characteristics. However, the technology of silicon carbide (SiC) or gallium nitride (GaN) of wide bandgap semiconductor devices has greatly expanded the distribution range of high voltage and high speed. How to accurately characterize the I-V curve or other static characteristics of power devices under high current/high voltage, This poses a more stringent challenge to device test tools.

4. Static parameter test solution for SiC/GaN power semiconductor devices based on PRECISE source measure meter

Static parameters mainly refer to relevant parameters that are inherent in themselves and have nothing to do with their working conditions. Static parameter test is also called steady state or DC (direct current) state test, which is performed after applying excitation (voltage/current) to a steady state. Mainly include: gate turn-on voltage, gate breakdown voltage, source-drain withstand voltage, source-drain leakage current, parasitic capacitance (input capacitance, transfer capacitance, output capacitance), and related characteristic curves of the above parameters test

Common problems in the static parameter test of third-generation wide-bandgap semiconductors, such as the influence of scan mode on the threshold voltage drift of SiC MOSFET, the influence of temperature and pulse width on the on-resistance of SiC MOSFET, the effect of equivalent resistance and equivalent inductance on SiC The impact of the MOSFET conduction voltage drop test, the impact of the line equivalent capacitance on the SiC MOSFET test and other dimensions, aiming at the problems of inaccuracy, incomplete measurement,reliability and low efficiency in the test, PRECISE Instruments provides a A test solution based on a domestically produced high-precision source measure unit (SMU), with better test capabilities, more accurate measurement results, higher reliability and more comprehensive test capabilities. It has the characteristics of high voltage and high current, accurate measurement of on-resistance in μΩ level, and current measurement capability in nA level. Supports measurement of junction capacitance of power devices in high-voltage mode, such as input capacitance, output capacitance, reverse transfer capacitance, etc.